The R6012JNJ is a high-voltage power MOSFET designed for switching applications, offering a maximum drain-source voltage of 600V and a continuous drain current of 12A. It features a low on-resistance of 0.390Ω, fast switching speeds, and a low reverse recovery time, making it suitable for efficient power conversion and switching circuits. Its compact TO-263S package ensures reliable thermal performance with junction-to-case resistance of 0.78°C/W. The device complies with RoHS standards and is ideal in advanced electronic systems requiring robust high-voltage switching components.
ROHM R6012JNJGTL High-Voltage Power MOSFET Specifications:
Drain-Source Voltage: 600 V
Continuous Drain Current: 12 A
Pulsed Drain Current: 36 A
Gate-Source Voltage: ±30 V
Avalanche Current: 2.9 A
Avalanche Energy: 327 mJ
Power Dissipation: 160 W
Junction Temperature Range: -55°C to +150°C
Thermal Resistance Junction-Case: 0.78°C/W
Thermal Resistance Junction-Ambient: 80°C/W
Gate Threshold Voltage: 5.0 V to 7.0 V
Lead Package: TO-263S
Body Diode Reverse Recovery Time: 70 ns
Body Diode Reverse Recovery Charge: 250 nc
RoHS Compliance: Yes
Buy the Buy ROHM R6012JNJ Power MOSFET Part Number R6012JNJ Online
Secure your ROHM R6012JNJ high-voltage power MOSFET today online and ensure optimal system performance. With a maximum drain-source voltage of 600V and 12A current capacity, this MOSFET offers low on-resistance and fast switching capabilities suitable for demanding power conversion circuits. Its RoHS compliant design guarantees eco-friendly manufacturing standards. Easy to integrate in various electronic modules, the R6012JNJ helps reduce energy loss and improve efficiency. Purchase now and enhance your power management solutions with this robust, high-performance component.
Buy ROHM R6012JNJ power MOSFET now and experience unmatched reliability and performance in high-voltage switching applications.
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