The RU1E002SP is a compact, high-speed switching MOSFET in a small SOT-323FL package, suitable for low-voltage applications. It features a maximum drain-source voltage of -30V, a continuous drain current of 250mA, and a power dissipation of 200mW. Designed with a body diode and ESD protection, it supports rapid switching with low input/output capacitance and on-state resistance. Its thermal resistance is 625°C/W, making it ideal for space-constrained electronic circuits requiring reliable fast switching and low power consumption.
ROHM RU1E002SPTCL Small Signal MOSFET Specifications:
Drain-Source Voltage: -30V
Continuous Drain Current: 250mA
Pulsed Drain Current: 500mA
Power Dissipation: 200mW
Junction Temperature Range: -55°C to +150°C
Thermal Resistance, Junction-Ambient: 625°C/W
Gate-Source Voltage: ±20V
Gate Threshold Voltage: -1.0V to -2.5V
On-State Resistance (Rds(on)): 14Ω to 24Ω at Ves = -4.5V, Ip = -150mA
Output Capacitance: 10pF
Input Capacitance: 30pF
Reverse Transfer Capacitance: 5pF
Package Type: SOT-323FL (UMT3F)
Size: A=0.85-1.05mm, D=1.90-2.10mm, E=1.15-1.35mm
Maximum Power Dissipation: 200mW
Body Diode Forward Voltage: -1.2V at -100mA
Buy the ROHM RU1E002SP – Reliable Switching MOSFET for Industrial Applications
Get the ROHM RU1E002SP small signal MOSFET today to optimize your electronic circuits with fast switching, low on-resistance, and compact design. Perfect for space-constrained applications requiring high reliability and low power dissipation. Available via online ordering, this MOSFET guarantees excellent performance for various electronic and industrial systems. Enhance your project with trustworthy components that support high-speed switching and ensure durability. Purchase now to benefit from fast delivery and quality assurance for your manufacturing needs.
Order your ROHM Series RU1E002SP compact MOSFET today and ensure fast, reliable switching in your electronic projects with low power consumption.
Frequently Asked Questions
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