The R8002ANJFRG power MOSFET features an 800V drain-source voltage, 2A continuous drain current, and 62W power dissipation, designed for high-voltage applications. It boasts low on-resistance, fast switching speeds, and ease of parallel use. Encased in TO-263S packaging with a reel size of 330 mm, it is suitable for switch mode power supplies and other high-voltage circuits. With a junction temperature range of -55°C to +150°C, it offers reliable thermal management and robust electrical performance in demanding environments.
ROHM R8002ANJFRGTL High-Voltage Power MOSFET Specifications:
Drain-Source Voltage Voss: 800V
Continuous Drain Current Ip: +2A
Pulsed Drain Current Ipp: +8A
Power Dissipation Pp: 62W
Junction Temperature Range: -55°C to +150°C
Thermal Resistance, Junction-Case Ric: 2.01°C/W
Thermal Resistance, Junction-Ambient Rina: 80°C/W
Gate-Source Voltage Vgs: +30V
Drain-Source Breakdown Voltage Ves: 800V
Gate Threshold Voltage Vth: 3.0V to 5.0V
Static On-Resistance Rds(on): 33Ω to 43Ω
Gate Resistance Rg: 6.6Ω
Dimensions: Size suitable for TO-263S package, hole diameter 6mm
Soldering Temperature (Wave): 265°C for 10s
Buy the Buy ROHM R8002ANJFRG Power MOSFET Part Number R8002ANJFRG Online
Purchase the ROHM R8002ANJFRG power MOSFET online today and enhance your high-voltage circuit designs. With an 800V drain-source rating and 2A continuous current, this MOSFET ensures excellent performance in power supplies and switching applications. Its low on-resistance and fast switching capability reduce heat and increase efficiency. Packaged in TO-263S with a reel size of 330 mm, it’s ideal for industrial and consumer electronics needing robust, reliable high-voltage components. Buy now to secure top-tier performance for your projects.
Buy ROHM R8002ANJFRG power MOSFET now and experience unmatched reliability and high-voltage performance for your electric circuits.
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