The RJU003N03FRA is a silicon N-channel MOSFET designed for switching applications, featuring low on-resistance and a 2.5V drive voltage. It is AEC-Q101 qualified, ensuring reliability for automotive and high-reliability environments. Suitable for compact, high-efficiency switching circuits, this power MOSFET has a drain-source voltage of 30V, drain current up to 300mA continuous and 41.2A pulsed, and maximum power dissipation of 200mW. Its package, Taping Type Code Ti06, includes 3000 units per tape, facilitating automated assembly.
ROHM RJU003N03FRAT106 Power MOSFET Specifications:
Package Type: Taping Type Code Ti06, 3000 units per tape
Drain-Source Voltage: 30 V
Gate-Source Voltage: ±12 V
Continuous Drain Current: 300 mA
Pulsed Drain Current: 41.2 A
Maximum Power Dissipation: 200 mW
Channel Temperature: 150 °C
Storage Temperature Range: -55 to +150 °C
Source, Gate, Drain Terminals: Same dimensions, mounted on recommended land
Thermal Resistance (Channel to Ambient): 625 °C/W
Body Diode Forward Voltage: 1.2 V at 200mA
Gate Threshold Voltage: 0.8 V to 1.5 V
Static On-Resistance (Vgs=4V): 0.9 to 1.3 Ω
Switching delay times, capacitance, and transfer admittance detailed in datasheet
Buy the Buy ROHM RJU003N03FRA Part Number RJU003N03FRA Online
Purchase the ROHM RJU003N03FRA power MOSFET easily online and enhance your switching circuits with high efficiency and low on-resistance. This N-channel device offers a drain-source voltage of 30V, continuous drain current up to 300mA, and pulsed current of 41.2A. It’s ideal for automotive, industrial, and power management applications, featuring a compact package for automated assembly. Reliable and durable, this MOSFET ensures excellent performance, making it an essential component for modern electronic systems.
Buy ROHM RJU003N03FRA now and experience unmatched reliability and low-voltage switching performance with this high-quality N-channel MOSFET.
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