The RQ3E120AT is a high-power, low on-resistance N-channel power MOSFET designed for efficient switching applications. Packaged in a compact HSMT8 form factor, it features a maximum drain-source voltage of 30V, with a continuous drain current of 412A and pulsed current of 48A. Its low gate threshold voltage, minimal gate leakage, and excellent thermal performance make it suitable for a wide range of power management and switching circuits. The device is RoHS compliant, halogen-free, and ideal for high-efficiency power supplies, motor control, and inverter systems.
Static On-Resistance: 8.0mΩ (typical at Vgs=-4.5V, Id=-12A)
Gate Threshold Voltage: -1.0V to -2.5V
Body Diode Forward Voltage: -1.2V (max)
Dimensions: 3.3mm x 3.3mm small mold HSMT8 package
RoHS compliant, Halogen Free, Pb-free lead plating
Package Taping Width: 12mm
Buy the Buy ROHM RQ3E120AT Part Number 8.0mΩ High Power MOSFET Online
Discover the high-efficiency ROHM RQ3E120AT power MOSFET, designed for demanding switching circuits. Featuring a maximum drain-source voltage of 30V and a continuous drain current of 412A, it ensures excellent power handling and thermal performance. Its low on-resistance, compact HSMT8 package, and RoHS compliance make it ideal for power supplies, motor control, and inverter designs. By purchasing online, you gain instant access to a robust, reliable component that enhances circuit efficiency and reduces system size without compromising performance.
Buy ROHM RQ3E120AT now and experience unmatched reliability and power performance in your switching applications.
Frequently Asked Questions
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