The RURO40N02 is a silicon N-channel MOSFET designed for switching applications, featuring a 1.5V drive, low on-resistance, and built-in G-S protection diode. Its compact TSMT3 surface-mount package makes it suitable for high-speed, low-voltage switching in various electronic devices. With a drain-source voltage of 20V and a continuous drain current of 44A, this MOSFET offers reliable performance in power management and control systems. It boasts a low gate threshold voltage, high pulsed current capacity, and efficient thermal characteristics, ensuring durability and optimal operation in demanding circuits.
Purchase the high-performance ROHM RUR040N02 power MOSFET online for efficient switching, low on-resistance, and reliable operation in power management systems. This device is ideal for high-speed switching applications requiring a maximum drain-source voltage of 20V and continuous drain currents up to 44A. Its compact TSMT3 package ensures easy integration into various circuit designs. With built-in protection features and excellent thermal performance, the RUR040N02 guarantees durability and efficiency, making it a top choice for engineers and maintenance professionals seeking reliable power components available for quick online procurement.
You can click on the BUY or RFQ button to purchase RUR040N02TL from an authorized ROHM distributor.
You can download the RUR040N02TL datasheet or visit the ROHM website for support.
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