The 2STD1665T4 is a 65V low-voltage, fast-switching NPN power transistor designed with planar technology and a base island layout. It offers high current gain, very low collector-to-emitter saturation voltage, and fast switching speeds, making it ideal for power management and industrial applications. Its well-controlled hFE parameter ensures increased reliability while minimizing switching and conduction losses.
STMICROELECTRONICS 2STD1665T4 Power Transistor Specifications:
Collector-emitter voltage Vceo: 65 V
Collector-base voltage Vcgo: 150 V
Emitter-base voltage Vebo: 7 V
Collector current Io: 6 A
Collector peak current Icm: 20 A
Base current Ib: 1 A
Total dissipation at 25°C: 15 W
Storage temperature range: -65°C to 150°C
Maximum junction temperature: 150°C
Thermal resistance junction-ambient: 8.33 °C/W
Package: DPAK (TO-252)
Thermal pad for heat dissipation
Fast electronic switching speeds with rise time around 90 ns and fall time similar
Capacitance between collector and base: 45 pF
Operation at frequencies up to 1 MHz
Buy the Buy STMicroelectronics 2STD1665T4 Power Transistor Part Number 2STD1665T4 Online
Experience the durability and high-performance capabilities of the STMicroelectronics 2STD1665T4 power transistor, engineered for efficient low-voltage switching and power management. Its robust design ensures fast switching, high current gain, and low saturation voltage, boosting your industrial and power regulation projects. With excellent thermal management features like a thermal pad and a maximum junction temperature of 150°C, this transistor provides reliable operation across broad temperature ranges. Order online today for trusted quality, fast delivery, and optimal performance tailored for demanding applications.
Get STMicroelectronics 2STD1665T4 today—built for high efficiency, fast switching speeds, and reliable power regulation.
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