These N-channel Power MOSFETs are developed using second generation MDmesh technology, combining vertical structure and strip layout to achieve ultra-low on-resistance and gate charge. Suitable for high-efficiency converters and switching applications, they are available in various packages including D?PAK, TO-220FP, TO-220, and TO-247. Key features include low input capacitance, gate charge, avalanche tested, and high voltage handling up to 500 V. They are ideal for demanding power electronic designs requiring reliability, efficiency, and compact form factors.
STMICROELECTRONICS STB32NM50N Power MOSFET Specifications:
Drain-source voltage: 500 V
Gate-source voltage: +25 V
Drain current (at 25°C): 22 A
Drain current (pulsed): 88 A
Total dissipation (at 25°C): 190 W
Avalanche current: 7 A
Peak diode recovery voltage slope: 15 V/µs
Storage temperature: -55°C to 150°C
Max. junction temperature: 150°C
Thermal resistance junction-case: 0.66 °C/W
Thermal resistance junction-ambient: 62.5 °C/W
Package options: D?PAK, TO-220FP, TO-220, TO-247
Approximate dimensions vary with package, typical length 25 mm (TO-220), 30 mm (TO-247)
Includes features like low gate charge, avalanche tested, and high reliability for demanding applications
Buy the STMicroelectronics Series MDmesh Power MOSFET: STB32NM50N
Purchase the STMicroelectronics STB32NM50N power MOSFET online today to enhance your power electronic projects. These devices deliver high voltage handling, low on-resistance, and reliable switching performance. Ideal for high-efficiency converters and demanding environments, their various package options ensure easy integration into your designs. With avalanche testing and low gate charge, they provide dependable operation and energy savings. Order now to upgrade your system with a robust, durable, and high-performance power MOSFET that meets industry standards for quality and reliability.
Get STMicroelectronics STB32NM50N today—built for precision, efficiency, and long-lasting durability in power switching.
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