STMICROELECTRONICS STD8N60DM2 High Voltage Power MOSFET
The high voltage N-channel Power MOSFET is specifically designed for demanding switching applications such as high efficiency converters, bridge topologies, and phase-shift converters. In a compact DPAK package, it features a fast-recovery body diode, extremely low gate charge, low on-resistance, and is 100% avalanche tested, offering high dv/dt ruggedness. Its robust design ensures reliable performance in high-voltage, high-current environments, making it ideal for high-speed switching and power management in industrial and automotive applications.
Package: DPAK (TO-252), Dimensions: Length ~6.2 mm, Width ~2.4 mm, Height ~10.1 mm
Operating junction temperature range: -55°C to 150°C
Storage temperature: -55°C to 150°C
Thermal resistance junction-case: 1.47°C/W
Avalanche current: 25 A, Energy: 430 mJ
Buy the STMicroelectronics Series MDmesh DM2 N-channel Power MOSFET: STD8N60DM2
Purchase the STMicroelectronics STD8N60DM2 high voltage Power MOSFET online today to enhance your switch-mode power supplies, motor drives, and high-efficiency converters. This robust device offers a low on-resistance, fast recovery diode, and excellent avalanche ruggedness, ensuring reliable operation in demanding industrial and automotive applications. Its compact DPAK package facilitates easy mounting, while its high pulsed current capacity and thermal stability promise durability. Order now and improve your circuit performance quickly with trusted quality and global shipping options.
Buy STMicroelectronics STD8N60DM2 now and experience unmatched reliability and high-speed switching in your power management designs.
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You can download the STD8N60DM2 datasheet or visit the STMICROELECTRONICS website for support.
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STMICROELECTRONICS
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