The high-voltage N-channel Power MOSFET STW70N65DM6-4 is designed for demanding power switching applications. With a voltage rating of 650 V and a continuous drain current of 68 A at 25°C, it features fast recovery diode, low R<sub>ds(on)</sub>, low gate charge, and high ruggedness. Suitable for high-efficiency bridge topologies, inverter drives, and phase-shift converters, it boasts excellent switching performance thanks to an extra driving source pin, and it is fully avalanche tested for reliability.
STMICROELECTRONICS STW70N65DM64 Power MOSFET Specifications:
Voltage Rating: 650 V
Drain Current (Continuous): 68 A at 25°C
Drain Current (Pulsed): 260 A
Power Dissipation: 450 W at 25°C
R<sub>ds(on)</sub>: 36-40 mΩ
Gate-Source Voltage: ±20 V
Gate Threshold Voltage: 4-5 V
Storage Temperature Range: -55°C to 150°C
Operating Junction Temperature: -55°C to 150°C
Thermal Resistance Junction-Case: 0.28°C/W
Avalanche Energy: 18 J
Package: TO247-4
Package Dimensions: Length 20.9-21.1 mm, Width 16.25-16.85 mm
Body Diode Recovery Time: 17 ns
Recovery Charge: 1.08 μC
Diode Recovery Current: 27 A
Buy the STMicroelectronics Series DM6 Power MOSFET: STW70N65DM6-4
Buy the high-performance power MOSFET STW70N65DM6-4 online today. Featuring 650 V, 68 A current capacity, fast recovery diode, and low R<sub>ds(on)</sub>, it delivers excellent switching efficiency for demanding applications. Ideal for inverter drives, high-efficiency bridge circuits, and phase-shift converters, this robust MOSFET ensures reliability with avalanche testing and high ruggedness. Purchase now to upgrade your power management system with reliable, high-quality components to meet your industrial and electronic project needs.
Order your STMicroelectronics Series DM6 STW70N65DM6-4 today and give your power switching projects the dependable quality they deserve.
Frequently Asked Questions
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You can download the STW70N65DM64 datasheet or visit the STMICROELECTRONICS website for support.
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STMICROELECTRONICS
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