The STF12N50M2 is a high-efficiency N-channel Power MOSFET built with advanced MDmesh II Plus technology, offering extremely low gate charge and low Rds(on). Rated at 500 V and 10 A, it is ideal for switching applications requiring minimal power loss and high reliability. Encased in a TO-220FP package, this device features low gate input resistance, avalanche robustness, and is suitable for high-performance power converters and inverters. Its design ensures excellent thermal handling and electrical performance for demanding electronic circuits.
STMICROELECTRONICS STF12N50M2 Power MOSFET Specifications:
Voltage Rating: 500 V
Drain Current (Continuous): 10 A at Tc = 25°C
Pulsed Drain Current: 40 A
Total Dissipation at 25°C: 85 W
Gate-Source Voltage: +25 V
Gate Threshold Voltage: 2 to 4 V
On-Resistance: 0.325 Ω at Vgs=10 V, Id=5A
Input Capacitance: 560 pF
Output Capacitance: 33 pF
Gate Charge: 15 nc
Reverse Recovery Time: 276 ns
Thermal Resistance Junction-Case Max: 5 °C/W
Storage Temperature Range: -85°C to +150°C
Maximum Junction Temperature: 150°C
Buy the STMicroelectronics Series MDmesh II Plus Power MOSFET: STF12N50M2
Purchase the STMicroelectronics Series MDmesh II Plus Power MOSFET STF12N50M2 online today for unmatched efficiency in high-voltage switching applications. Engineered with low gate charge and minimal on-resistance, it ensures your circuits operate with maximum power efficiency and reliability. Suitable for power converters, inverters, and high-demand switching systems, this TO-220FP package device offers excellent thermal performance and avalanche robustness. Trust ST’s quality for your critical electronic designs and enhance your project's overall performance today.
Order your STMicroelectronics Series MDmesh II Plus Power MOSFET STF12N50M2 today and give your power electronic projects the dependable, high-performance quality they deserve.
Frequently Asked Questions
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STMICROELECTRONICS
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