STMICROELECTRONICS STGWA20H65DFB2 High-Speed Power IGBT
The IGBT 650 V HB2 series features a trench gate field-stop structure, optimized for low conduction losses with better Vce(sat) behavior at low currents and reduced switching energy. It includes a very fast, soft recovery diode co-packaged in antiparallel, designed to maximize efficiency in high-speed applications like welding, power factor correction, UPS, solar inverters, and chargers. With a maximum junction temperature of 175°C, low thermal resistance, and tight parameter distribution, it ensures high reliability and swift switching performance in demanding environments.
STMICROELECTRONICS STGWA20H65DFB2 High-Speed Power IGBT Specifications:
Collector-emitter voltage Vce: 650V
Continuous collector current at Tc=25°C: 40A
Pulsed collector current: 60A
Gate-emitter voltage Vge: ±20V
Maximum junction temperature: 175°C
Storage temperature range: -55°C to 150°C
Thermal resistance junction-case: 1.02°C/W
Thermal resistance junction-ambient: 50°C/W
Operating junction temperature: -55°C to 175°C
Maximum power dissipation: 147W
Package: TO-247 long leads
Switching times (turn-on/turn-off): approximately 8-17 ns
Reverse recovery time: 215 ns
Reverse recovery charge: 2772 nC
Buy the Buy STMicroelectronics IGBT 650 V Part Number STGWA20H65DFB2 Online
Purchase the STGWA20H65DFB2 high-speed power IGBT online today and elevate your high-current switching applications. Designed for reliability and efficiency, this 650V IGBT features a trench gate structure for optimized conduction and reduced switching energy. The package includes a co-packaged fast, soft recovery diode, making it ideal for welding, power correction, UPS, and solar inverter systems. With a maximum junction temperature of 175°C and low thermal resistance, it ensures high performance in demanding environments. Order now for technical excellence and durability.
Get STGWA20H65DFB2 today—built for fast switching, high efficiency, and long-lasting durability in high-power applications.
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