These are high-speed trench gate field-stop IGBTs from the HB series, designed for efficient power switching at 650 V and 40 A. They feature a proprietary trench gate structure that minimizes tail current and offers very low saturation voltage of 1.6 V at 40 A, ensuring high efficiency in switching applications. The devices are suitable for photovoltaic inverters and high-frequency converters, providing tight parameter distribution, safe paralleling, low thermal resistance, and a maximum junction temperature of 175°C for reliable operation in demanding environments.
Package options: TO-3PF, TO-247, TO-247 long leads, TO-3P
Features include high speed switching, minimized tail current, tight parameter distribution, and low thermal resistance.
Buy the Buy STMicroelectronics High-Speed Trench Gate IGBT Part Number STGWA40H65FB Online
Order the STGWA40H65FB high-speed trench gate IGBT online today for efficient power switching in photovoltaic inverters and high-frequency converters. This device offers a high voltage rating of 650 V and a continuous current of 40 A, with a maximum junction temperature of 175°C for reliable operation. Its features include low saturation voltage of 1.6 V at 40 A, minimized tail current, and excellent paralleling capability. Choose online for fast delivery and assured quality in your power systems.
Buy STMicroelectronics STGWA40H65FB now and experience unmatched reliability and performance in high-voltage switching applications.
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