The STPSC20H12C is an ultrahigh performance 1200 V power Schottky silicon carbide diode in a TO-247 LL package. Designed with a silicon carbide substrate, it offers negligible reverse recovery and excellent switching behavior, making it ideal for PFC and secondary side applications. With a high forward surge capability and robust construction, it supports high transient currents and operates efficiently from -40°C to 175°C. The diode's low forward voltage drop and minimal junction capacitance enhance power conversion efficiency and system reliability.
Peak forward surge current: 42 A (10 ms), 420 A (10 us)
Junction temperature range: -40 to +175°C
Device thermal resistance: junction to case 0.35-0.48°C/W
Forward voltage drop: 1.75-2.25 V at 10 A
Reverse leakage current: 30-400 pA at 150°C
Capacitance: 47 pF at 800 V reverse voltage
Operating junction temperature: -40°C to +175°C
Temperature coefficient: 135 V typical, 150°C maximum operating temperature
Package: TO-247 LL with long leads, epoxy meets UL94 V0
Cooling method: conduction
Recommended torque: 0.9 to 1.2 N-m
Buy the STMicroelectronics Series Power Schottky Silicon Carbide Diode: STPSC20H12CWL
Purchase the high-performance silicon carbide diode in a robust TO-247 LL package from STMicroelectronics today. With a 1200 V voltage rating, minimal reverse recovery, and excellent surge capability, this diode ensures efficient power switching in PFC circuits and secondary side applications. Its low forward voltage and thermal stability support high efficiency and system robustness. Ideal for demanding industrial environments, this diode offers reliable operation from -40°C to 175°C, helping optimize your power management and reduce system downtime.
Buy STMicroelectronics STPSC20H12CWL in a durable TO-247 LL package now and experience unmatched reliability and high-voltage performance for power switching.
Frequently Asked Questions
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You can download the STPSC20H12CWL datasheet or visit the STMICROELECTRONICS website for support.
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STMICROELECTRONICS
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