The STW36N55M5 is an N-channel 550 V power MOSFET engineered with innovative vertical process technology and PowerMESH™ horizontal layout for low on-resistance and high efficiency. Suitable for switching applications, this device delivers excellent switching performance, high dv/dt capability, and is 100% avalanche tested. Available in TO-220 and TO-247 packages, it offers a drain current of up to 33 A and is ideal for high power density applications requiring outstanding power efficiency and reliability.
STMICROELECTRONICS STW36N55M5 Power MOSFET Specifications:
Voltage Rating: 550 V
Drain Current: 33 A (continuous at Tc = 25°C)
Pulsed Drain Current: 132 A
Rds(on): 0.06 Ω (typ.) at Veg = 10 V, Id = 16.5 A
Power Dissipation: 190 W at Tg = 25°C
Switching Times: Rise time 13 ns, Fall time 13 ns, Crossing time 17 ns
Package: TO-220 and TO-247
Thermal Resistance Junction-Case Max: 0.66 °C/W
Storage Temperature: -55°C to 150°C
Maximum Junction Temperature: 150°C
Avalanche Current: 7 A, Repetitive or non-repetitive
Gate Threshold Voltage: 3–5 V
Gate-Source Voltage: +25 V
Reverse Recovery Time: 334 ns
Forward Voltage: 15 V (at 33 A)
Reverse Recovery Charge: 5 μC
Buy the Buy STMicroelectronics Power MOSFET Part Number STW36N55M5 Online
Purchase the STW36N55M5 now to ensure efficient high-voltage switching in your electronic systems. This power MOSFET combines innovative vertical process technology with PowerMESH structure, resulting in outstanding low on-resistance, high dv/dt capability, and superior power density. Suitable for demanding switching applications like power supplies and motor drives, it is available in durable TO-220 and TO-247 packages. Benefit from tested reliability, excellent thermal performance, and high current capacity with this robust, high-efficiency device designed for professional electronics and industrial use.
Get STW36N55M5 today—built for high power switching with low on-resistance and robust thermal performance.
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