The power MOSFET STB23NM50N is a high-efficiency, N-channel device designed for demanding switching applications. Made with second-generation MDmesh technology, it features a vertical structure that provides extremely low on-resistance of 0.162Ω and gate charge, making it ideal for high-efficiency converters. The device is tested for 100% avalanche robustness, and it operates at a maximum drain-source voltage of 500V and continuous drain current of 17A. Packaged in TO-220, TO-220FP, TO-247, and D2PAK packages, it offers excellent thermal performance and electrical reliability for power management systems.
STMICROELECTRONICS STB23NM50N Power MOSFET Specifications:
Drain-source voltage: 500 V
Gate-source voltage: +25 V
Continuous drain current: 17 A at 25°C
Pulsed drain current: 68 A
Maximum total dissipation: 125 W
Thermal resistance junction-case: max 4.17°C/W
Thermal resistance junction-ambient: max 62.5°C/W
Maximum operating junction temperature: 150°C
Storage temperature range: -55°C to +150°C
Device packages: TO-220, TO-220FP, TO-247, D2PAK
Avalanche current: 6 A
Single pulse avalanche energy: 254 mJ
Buy the STMicroelectronics Series MDmesh Power MOSFET: STB23NM50N
Discover the reliable STB23NM50N power MOSFET, designed for high-performance switching applications. With 500V drain-source voltage and 17A continuous current, it offers low on-resistance and excellent thermal management. Packaged in TO-220, TO-220FP, TO-247, and D2PAK, it ensures optimal efficiency for power converters and industrial systems. This device is extensively tested for avalanche robustness, making it ideal for demanding environments. Invest now to enhance your power management solutions with proven quality and durability from STMicroelectronics.
Order your STMicroelectronics Series MDmesh Power MOSFET STB23NM50N today and give your projects the dependable quality they deserve.
Frequently Asked Questions
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You can download the STB23NM50N datasheet or visit the STMICROELECTRONICS website for support.
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STMICROELECTRONICS
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