The OP231 is a gallium aluminium arsenide (GaAlAs) infrared emitting diode housed in a hermetic metal package. Its GaAlAs construction provides a higher radiated output compared to standard gallium arsenide at the same forward current. The diode features a lens that produces a narrow beam angle of 18°, suitable for precise beam applications. With an emission wavelength of 890 nm, it closely matches the spectral response of silicon phototransistors. This device is mechanically and spectrally compatible with OP800, OP593, and OP598 phototransistors, making it ideal for non-contact reflective object sensors, automation, safety, end-of-travel detection, and door sensors. It offers focused or non-focused optical patterns and an enhanced temperature range for reliable operation in various applications.
Purchase the Hlectronics OP231 infrared emitting diode online today and enhance your sensor and automation systems with superior optical power, precise beam angles, and high reliability. Perfect for non-contact detection, safety, and industrial automation, it offers a robust hermetic package and an operating temperature range from -65°C to +125°C. Whether for assembly line automation or safety sensors, this diode ensures consistent performance, ease of integration, and long-term durability. Order now to improve your industrial sensing applications with these high-quality infrared emitters.
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You can download the OP231 datasheet or visit the TT Electronics - Optek Technology website for support.
TT Electronics - Optek Technology