The IRF730A is a high-performance N-channel power MOSFET designed for switch mode power supplies and high-speed power switching applications. It offers low gate charge for simple drive, high avalanche energy, and ruggedness, making it suitable for uninterruptible power supplies and other power switching needs. The device features a drain-source voltage of 400V, a continuous drain current of 22A, and low on-resistance, ensuring efficient operation and reliable performance in demanding electronic circuits. Fully characterized for capacitance and avalanche voltage, it conforms to RoHS standards for environmentally conscious manufacturing.
Vishay IRF730APBF High Power N-Channel MOSFET Specifications:
Drain-Source Voltage: 400 V
Gate-Source Voltage: 230 V
Continuous Drain Current: 22 A
Pulsed Drain Current: 55 A
Maximum Power Dissipation: 74 W
Gate Charge: 22 nC
Gate-Source Charge: 5.8 nC
Gate-Drain Charge: 9.3 nC
Drain-Source On-State Resistance: 10.2 mΩ at 10 V
Avalanche Energy: 290 mJ
Body Diode Forward Voltage: 16 V
Operating Junction Temperature Range: -55°C to +150°C
Maximum Junction-to-Case: 1.70°C/W
Maximum Junction-to-Ambient: 62°C/W
Temperature Coefficient: -0.5 V/°C
Repetitive Avalanche Current: 55 A
Repetitive Avalanche Energy: 74 mJ
Buy the Vishay Series Power MOSFET: IRF730A
Purchase the Vishay IRF730A online now to enhance your power switching designs with a robust, high-voltage, low-resistance N-channel MOSFET. This device is ideal for switch-mode power supplies, uninterruptible power systems, and high-speed power switching. It provides excellent efficiency, rugged avalanche capability, and conforms to RoHS standards. With a drain-source voltage of 400V and 22A continuous current, it ensures reliable and efficient operation in demanding electronic circuits. Order today for fast delivery and technical support.
Get Vishay IRF730A today—built for high power and durability in switching applications.
Frequently Asked Questions
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