The Si4403CDY is a P-Channel 1.8 V MOSFET capable of high current switching applications. It features trenchFET technology, low on-resistance, and is RoHS compliant. Suitable for adaptor switches, load switches, and notebook power management, it offers a maximum drain-source voltage of 20 V, a gate-source threshold voltage between -0.4V and -1.0V, and continuous drain currents up to 10.7 A. Its thermal resistance, high avalanche current, and low gate leakage make it ideal for efficient power control in compact electronic devices.
Vishay SI4403CDYT1GE3 Power MOSFET Specifications:
Drain-Source Voltage: 20 V
Gate-Source Voltage: ±8 V
Gate-Source Threshold Voltage: -0.4 V to -1.0 V
Continuous Drain Current: 10.7 A at Tj=25°C
Pulsed Drain Current: 40 A
On-State Resistance: 0.0125 - 0.0250 Ω
Maximum Power Dissipation: 1.685 W at 70°C
Operating Junction Temperature Range: -55°C to 150°C
Package: SO-8 (Narrow) with dimensions 4.80-5.00 mm length, 3.80-4.00 mm width
Thermal Resistance Junction-to-Ambient: Max 50°C/W
Avalanche Current: 15 A
Reverse Recovery Time: 150 ns
Body Diode Forward Voltage: -0.66 V
Gate Charge: 3 nC
Buy the Vishay Si4403CDY – Reliable Power MOSFET for Industrial Applications
Order the Vishay Si4403CDY power MOSFET online now for efficient high-current switching with low on-resistance and robust thermal performance. Ideal for adaptor switches, load switches, and notebook power management, this RoHS-compliant device offers a maximum drain-source voltage of 20 V and continuous drain currents up to 10.7 A. Its compact SO-8 package and excellent thermal characteristics ensure reliable operation in various electronic applications. Buy online today and enjoy fast shipping, quality assurance, and industry-leading performance for your power control needs.
Get Vishay Si4403CDY today—built for precision, low Rds(on), and high-current performance in power switching devices.
Frequently Asked Questions
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