The SI9433BDY-T1-GE3 is a 20V P-channel enhancement-mode power MOSFET with an integrated antiparallel diode. Built with TrenchFET® technology, it is halogen-free and capable of operating within a -55°C to 150°C temperature range. Designed for industrial, power management, and electronic applications, this MOSFET provides low Rds(on) values, high continuous drain current, and robust thermal and electrical characteristics. Suitable for switching and power regulation tasks requiring reliable, high-performance components in compact packages.
On-Resistance (Rds(on)): 0.030Ω at Vas = -4.5 V, 0.040Ω at Vas = -4.5 V
Diode Forward Voltage: 0.76 V at Is = -2.6 A
Gate Charge: 8.8 nC
Total Gate Charge: 8.8 nC
Operating Temperature Range: -55°C to 150°C
Package: SOIC Narrow 8-lead
RoHS and Halogen-Free Compliant
Buy the Vishay Siliconix Series TrenchFET Power MOSFET: SI9433BDY-T1-GE3
Purchase the Vishay Siliconix SI9433BDY-T1-GE3 online today for reliable high-performance switching. Designed for industrial and power management applications, this halogen-free P-channel MOSFET features a 20V drain-source voltage, low Rds(on), high continuous drain current, and operating temperature from -55°C to 150°C. Its compact SOIC package optimizes space and heat dissipation, ensuring efficiency and durability in demanding environments. Order now for fast delivery and direct integration into your electronic systems for superior power regulation and switching performance.
Get Vishay Siliconix SI9433BDY-T1-GE3 today—built for high current switching and long-lasting durability in industrial power supply applications.
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