The Vishay Siliconix SIDR622DPT1RE3 is a high-performance N-Channel Power MOSFET in PowerPAK SO-8DC package, capable of handling 150 V with low on-resistance. Designed for high power density applications such as DC/DC converters, motor drives, and synchronous rectification, it features top side cooling for enhanced thermal management, high pulsed and continuous drain currents, and robust avalanche energy ratings. Its advanced trench technology ensures efficient switching, making it suitable for demanding switching and power management tasks in industrial and consumer electronics.
Vishay SIDR622DPT1RE3 High-Voltage Power MOSFET Specifications:
Drain-source voltage Vos: 150 V
Gate-source voltage Ves: ±20 V
Continuous drain current Ip: 64.656 A
Pulsed drain current: 100 A
Drain-source on-resistance Rds(on): 0.0177 Ω at Ves=10 V, 0.0204 Ω at Ves=7.5 V
Gate charge Qg: 9.2 nC
Total gate charge Qg: 9.2 nC
Body diode continuous current Is: 60 A
Maximum power dissipation: 62556 W
Operating junction temperature range: -55°C to +150°C
Thermal resistance junction-to-ambient: 20°C/W
Thermal resistance junction-to-case: 1°C/W
Peak soldering temperature: 260°C
Package type: PowerPAK SO-8DC
Maximum avalanche energy Eas: 80 mJ
Reverse recovery time: 225 ns
Reverse recovery charge: 680 nc
Gate resistance: 3.5 Ω
Rise time: 12 ns
Fall time: 12 ns
Buy the Vishay Series PowerPAK SO-8DC High-Voltage MOSFET: SIDR622DPT1RE3
Purchase the Vishay SIDR622DPT1RE3 high-voltage N-Channel MOSFET online today. Designed for efficient power switching, it features low Rds(on), high pulsed and continuous drain currents, and a robust PowerPAK SO-8DC package. Ideal for high power density applications such as DC/DC converters, motor drives, and synchronous rectification, this device ensures excellent thermal management with top side cooling. Experience seamless installation, reliable operation, and superior performance—streamline your project with this advanced power semiconductor.
Buy Vishay SIDR622DPT1RE3 now and experience unmatched reliability and high power efficiency suited for demanding electronic applications.
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