The SQJQ906ELT1GE3 is a high-performance, automotive-grade dual N-channel MOSFET designed for demanding power switching applications. It features a PowerPAK 8 x 8L package, operating voltage of 40 V, low Rds(on) of 0.0043 ohms at 10 V, and a maximum drain current of 160 A. Its robust thermal and electrical specifications make it suitable for automotive electronics, ensuring reliability under harsh conditions. The device is AEC-Q101 qualified, fully lead-free, and RoHS compliant, providing a durable and environmentally friendly solution for modern vehicle systems.
Continuous Drain Current: 160 A at Tj=25°C, 67 A at Tj=125°C
Maximum Power Dissipation: 62 W at Tj=125°C
On-State Resistance: 0.0043 Ω at Vgs=10 V, 0.0054 Ω at Vgs=4.5 V
Gate Charge: 35-45 nC
Input Capacitance: 2590-3238 pF
Output Capacitance: 1785-2230 pF
Source-Drain Diode Forward Voltage: 1.2 V at 40 A
Operating Temperature Range: -55°C to +175°C
Thermal Resistance Junction-to-Ambient: 60 °C/W
Package: PowerPAK 8x8L, lead-free, RoHS compliant
Buy the Vishay Series PowerPAK 8x8L Dual N-Channel MOSFET: SQJQ906ELT1GE3
Experience reliable power switching with our automotive-grade dual N-channel MOSFET. The Vishay SQJQ906ELT1GE3 offers a low Rds(on), high current capacity, and is AEC-Q101 qualified, ensuring safe operation in demanding environments. Its robust thermal characteristics and wide temperature range make it suitable for a variety of automotive electronic applications. Easily purchase this durable, high-performance MOSFET online now to enhance your industrial or automotive system’s efficiency and reliability.
Get Vishay SQJQ906ELT1GE3 today—built for automotive power switching and high-current durability.
Frequently Asked Questions
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