The Vishay Siliconix SIHB120N60E is an N-channel power MOSFET designed for high-voltage switching applications such as server power supplies, industrial drives, and lighting systems. Featuring a D2PAK (TO-263) package, it offers a drain-source voltage of 600V, low on-resistance (0.104Ω at 10V Vgs), and high pulsed drain current of 66A. Its advanced 4th generation E series technology provides reduced switching losses, low gate charge, and excellent avalanche energy ratings. Ideal for efficient, high-voltage switching with robust thermal and electrical performance.
Vishay SIHB120N60ET1GE3 Power MOSFET Specifications:
Drain-source voltage: 600 V
Gate-source voltage: +30 V
Continuous drain current at 100°C: 16 A
Pulsed drain current: 66 A
Maximum power dissipation: 179 W
Threshold voltage: 3.0 – 5.0 V
On-state resistance: 0.104 Ω at 10 V GS
Gate charge: 45 nC
Peak diode recovery dv/dt: 50 V/ns
Operating temperature range: -55 to +150 °C
Package: D2PAK (TO-263)
Avalanche energy rating: 88 mJ
Storage temperature: -55 to +150 °C
RoHS compliant, halogen-free
Buy the Vishay Series Power MOSFET: SIHB120N60E
Purchase the Vishay Power MOSFET SIHB120N60E online today for reliable high-voltage switching. This N-channel device features a voltage rating of 600V, low Rds(on), high pulsed drain current, and advanced technology for efficient industrial, power supply, and lighting applications. Its robust thermal and electrical attributes ensure durability and performance in demanding environments. Shop now to enhance your power systems with confidence, benefiting from quick delivery and excellent technical support for your industrial and electronic projects.
Order your Vishay Series Power MOSFET SIHB120N60E today and give your high-voltage switching projects the dependable quality they deserve.
Frequently Asked Questions
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