The Vishay Siliconix SiHFO65N60E is an N-channel power MOSFET designed for high-efficiency switching applications. It features low on-resistance and a robust TO-220 FULLPAK package, suitable for server, telecom power supplies, motor drives, and solar inverters. This device provides excellent avalanche energy ratings, low gate charge, and low leakage current, ensuring reliable operation at high voltages up to 600 V and high current loads. It complies with RoHS standards and offers low conduction and switching losses for energy-efficient performance in industrial and consumer electronics.
Vishay SIHF065N60EGE3 Power MOSFET Specifications:
Drain-source voltage Vos: 600 V
Gate-source voltage Ves: +30 V
Continuous drain current at 25°C: 25 A
Pulsed drain current: 116 A
Maximum power dissipation: 39 W
Operating junction temperature range: -55°C to +150°C
Gate charge: 49-74 nC
Maximum junction-to-ambient thermal resistance: 65°C/W
Rds(on) at Vgs = 10 V: 0.057-0.065 Ω
Gate threshold voltage: 3-5 V
Avalanche energy: 226 mJ
Body diode forward voltage at 16 A: 1.2 V
Peak diode recovery dv/dt: 50 V/μs
Peak reverse recovery charge: 71-142 μC
Soldering temperature: 260°C for 10 sec
Mounting torque: 0.6 Nm
Buy the Buy Vishay SiHFO65N60E Part Number SIHF065N60E Online
Order the Vishay SiHFO65N60E power MOSFET online today and experience superior high-voltage switching with low conduction losses. Perfect for power supplies, motor drives, and solar inverters, this device ensures reliable operation with high avalanche energy ratings and low gate charge. Its robust TO-220 fullpak package allows easy mounting and excellent thermal performance. Designed for industrial, telecom, and consumer electronics, this MOSFET offers energy efficiency, durability, and precision switching—making it an essential component for your projects and manufacturing needs.
Get Vishay SiHFO65N60E today—built for high voltage and energy-efficient switching performance in industrial and electronics applications.
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