This N-channel 30V power MOSFET from the PowerPAK SO-8 series offers high power density, low on-resistance, and robust thermal performance. Its features include a maximum drain-source voltage of 30V, a continuous drain current of 19.8A at 25°C, and low gate charge, making it suitable for high-efficiency DC/DC converters, synchronous rectification, and embedded power switching applications. The device is RoHS compliant, halogen-free, and optimized for reliable performance and thermal management in compact electronic designs.
Vishay SIRA14DPT1GE3 N-Channel Power MOSFET Specifications:
Drain-Source Voltage: 30 V
Gate-Source Voltage: +20 V / -16 V
Continuous Drain Current at 25°C: 19.8 A
Pulsed Drain Current: 130 A
Maximum Power Dissipation: 3.6 W at 25°C
Gate Threshold Voltage: 1 V - 2.2 V
On-Resistance (Rds(on)): 0.00510 at 10 V, 0.00850 at 4.5 V
Gate Charge: 94 nC
Output Capacitance: 445 pF
Thermal Resistance (Junction-to-Ambient): 34°C/W maximum
Operating Temperature Range: -55°C to 150°C
Body Diode Forward Voltage: 0.76 V
Body Diode Reverse Recovery Time: 24 ns
Buy the Vishay Series SiRA14DP N-Channel MOSFET: SIRA14DP
Purchase the Vishay Series SiRA14DP N-Channel MOSFET online today for reliable power switching performance in compact designs. With a maximum drain-source voltage of 30V, low Rds(on), and high pulsed current capability, this MOSFET is ideal for high-efficiency DC/DC converters, synchronous rectification, and embedded power applications. Its thermal management features, including low junction-to-ambient resistance, ensure it stays cool under load, improving overall system reliability. Buy now to enhance your electronic projects with this durable, RoHS-compliant component built for demanding environments.
Order your Vishay Series SiRA14DP 30V N-Channel MOSFET today and ensure your projects benefit from excellent thermal performance and low conduction loss.
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