The Vishay Siliconix SiZ322DT is a dual N-channel MOSFET designed for high-efficiency power switching applications such as synchronous buck converters and half-bridge circuits. It features TrenchFET® Gen IV technology, offering low Rds(on) and high current capability, with a maximum drain-source voltage of 25 V. Suitable for high-frequency switching, it is RoHS compliant, and tested for Rg and UIS. Its compact PowerPAIR® 3 x 3 package ensures easy mounting and reliable operation in demanding power management systems.
Operating junction temperature range: -55°C to +160°C
Package: PowerPAIR 3 x 3, RoHS and halogen-free
Soldering peak temperature: 260°C
Maximum power dissipation: 3786 mW at 53°C
Body diode reverse recovery time: Max. 44 ns
Maximum junction-to-case thermal resistance: Max. 75 °C/W
Buy the Buy Vishay SiZ322DT Part Number SIZ322DTT1GE3 Online
Purchase the Vishay SiZ322DT dual N-channel MOSFET online today and enjoy high-performance switching capabilities with low Rds(on), excellent thermal stability, and RoHS compliance. Its optimized TrenchFET technology ensures efficient operation in high-frequency circuits such as DC/DC converters and half-bridge modules. The compact PowerPAIR® 3 x 3 package facilitates easy integration into power management systems, providing reliable operation under demanding conditions. Order now to improve your electronic design’s efficiency and durability with this premium power MOSFET.
Buy Vishay SiZ322DT now and experience unmatched reliability and high-speed power switching in compact packages.
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