The DZT5551 is an NPN bipolar junction transistor designed for high voltage amplification and switching applications. It features a continuous collector current of 600mA and a high current gain (hFE) rated up to 50mA for reliable performance. The device complies with UL94V-0 flammability standards, exhibits low saturation voltage, and is halogen-free with a green construction. It operates within a temperature range of -55°C to 150°C. Suitable for defense, military, aerospace, automotive, power management, and industrial uses. The PNP complement is DZT5401. High market demand may extend lead times, and delivery dates can fluctuate. No discounts apply.
Purchase the Diodes high voltage NPN transistor DZT5551 online today for robust performance in switching and amplification tasks. With a collector current of 600mA and voltage tolerance up to 160V, it is ideal for industrial, automotive, aerospace, power management, and defense applications. This device features a low saturation voltage, RoHS compliance, and a green, halogen-free construction. Enjoy fast delivery, secure online ordering, and the assurance of a high-quality component designed for demanding high-voltage applications. Upgrade your systems with DZT5551 now for reliable operation under extreme conditions.
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You can download the DZT5551 datasheet or visit the DIODES INC. website for support.
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