The AIKW50N65DF5XKSA1 is a high-speed switching semiconductor device featuring fifth-generation trenchstop technology with integrated RAPID 1 antiparallel diode, optimized for industrial applications such as off-board and on-board chargers, and DC/DC converters. It offers 650V breakdown voltage, low gate charge for efficient switching, and is qualified according to AEC-Q101 standards. The device provides excellent efficiency in hard switching and resonant conditions, with a maximum junction temperature of 175°C. The package includes clearly defined pinouts for gate, collector, and emitter connections, ensuring reliable integration into power modules and systems.
Collector Current: 80 A (at 25°C), 53.5 A (at 100°C)
Pulsed Collector Current: 150 A
Maximum Junction Temperature: 175°C
Power Dissipation: 270 W (at 25°C), 136 W (at 100°C)
Thermal Resistance: Junction to case 0.55 K/W, Junction to ambient 40 K/W
Gate-Emitter Voltage: +20 V (max), Transient +30 V
Package: PG-T0-247-3 (TO247-3 Pin)
Qualification: AEC-Q101 qualified
RoHS compliant, Halogen-Free
Buy the Infineon AIKW50N65DF5XKSA1 – Reliable High-Speed IGBT for Industrial Applications
Order the Infineon AIKW50N65DF5XKSA1 high-speed IGBT online today and experience exceptional efficiency in power conversion. Designed with fifth-generation trenchstop technology and an integrated RAPID 1 diode, this device ensures rapid switching, low gate charge, and robust thermal performance. Perfect for industrial applications like chargers and DC/DC converters, it is qualified per AEC-Q101 standards and features a 650V breakdown voltage. Buy online now for reliable performance, easy integration, and long-term durability in demanding power systems.
Get Infineon AIKW50N65DF5XKSA1 today—built for precision and long-lasting durability in high-power switching systems.
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