The BFR840L3RHESD is a high-performance HBT (Heterojunction Bipolar Transistor) designed for 5-6 GHz Wi-Fi applications, offering excellent input/output power match and low noise figure. Its high transition frequency of 75 GHz ensures superior RF performance and robustness against ESD and input power surge thanks to integrated protection elements. This device operates efficiently at low voltage and power, making it ideal for portable, battery-powered devices in wireless communication systems, satellite communications, and RF front-end modules. Its small, thin, leadless package simplifies module integration and space-saving designs.
Collector Emitter Leakage Current: Max 400 nA at Vge = 1.5V
DC Current Gain: 150 - 450 at Ic=10mA, Vge=1.8V
Power Gain at 2 GHz: Max 27 dB
Minimum Noise Figure at 5.5 GHz: 0.65 dB
Maximum RF Input Power: 20 dBm
ESD Hardness: 1.5 kV HBM
Package: TSLP-3-9, very small, leadless, thin profile (0.31 mm height)
Operating in low voltage range: 1.2 V to 3.6 V
Maximum Power Dissipation: 75 mW
Junction Temperature: Max 150°C
Storage Temperature: -55°C to +150°C
Buy the Infineon Series RF Transistor: BFR840L3RHESD
Purchasing the BFR840L3RHESD online guarantees quick delivery of this advanced RF transistor, optimized for Wi-Fi, satellite, and radar applications. Its high transition frequency, robust protection, and low noise figure ensure top-tier performance in your RF and communication systems. Designed for low power consumption and compact modules, this device is perfect for portable and space-constrained applications. Secure your supply today and boost your project's reliability, efficiency, and performance with this high-quality, RoHS-compliant transistor engineered for demanding RF environments.
Buy Infineon BFR840L3RHESD now and experience unmatched RF performance, robustness, and energy efficiency in your wireless and satellite communication projects.
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