The BCV 61C E6327 is a high-performance NPN silicon double bipolar transistor array designed for applications requiring good thermal coupling and VBE matching. It is suitable for use as a current mirror, offering high current gain and low collector-emitter saturation voltage. Typical applications include power management and industrial circuits.
Noise figure: specified at 1 kHz, 200 Ω load, 1 dB
Short-circuit input impedance: 45 Ω
Collector-emitter breakdown voltage: 30 V
Collector-base breakdown voltage: 30 V
Emitter-base breakdown voltage: 6 V
Buy the Infineon BCV61 Reliable Power Transistor Array for Industrial Applications
Enhance your industrial automation projects with the reliable BCV61 Power Transistor Array from Infineon. Designed for optimal thermal coupling and VBE matching, this high-performance NPN silicon double transistor is ideal for current mirror applications, power management, and industrial circuits. It features a collector-emitter voltage of 30 V, a peak collector current of 200 mA, and a transition frequency of 250 MHz, ensuring high speed and stability. Easy to integrate, the BCV61 guarantees durability and consistent performance under demanding conditions. Order online now for fast delivery and trusted quality.
Buy Infineon BCV61 now and experience unmatched reliability and high performance in industrial and power management circuits.
Frequently Asked Questions
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