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INFINEON IPD65R660CFDAATMA1 High Voltage Power Transistor

The Infineon 650V CoolMOS CFDA Power Transistor is a high-performance, superjunction MOSFET designed for efficient switching in automotive and industrial applications. Featuring an ultra-fast body diode, very high commutation ruggedness, and extremely low conduction and switching losses due to optimized Rdson*Qg and Eoss, it provides reliable, energy-efficient performance. The device supports high pulsed and continuous drain currents, operates over a temperature range of -40°C to 150°C, and is RoHS compliant with a green, Pb-free package, making it ideal for resonant switching and high-voltage applications requiring robust and fast switching capabilities.

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Source:Newark
Part No:IPD65R660CFDAATMA1
Stock:4015
Inv Date:05-29-2026
Price: Unit price: $0.954
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Source:DigiKey
Part No:IPD65R660CFDAATMA1
Stock:2572
Inv Date:05-29-2026
Price: Unit price: $0.81656
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Part No:IPD65R660CFDAATMA1
Stock:0
Inv Date:05-30-2026
Price: N/A
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Part No:IPD65R660CFDAATMA1
Stock:0
Inv Date:05-29-2026
Price: Unit price: $0.985
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Source:Arrow EU
Part No:IPD65R660CFDAATMA1
Stock:2500
Inv Date:05-30-2026
Price: N/A
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INFINEON IPD65R660CFDAATMA1 High Voltage Power Transistor Specifications:

  • Drain-source breakdown voltage: 650 V
  • RDS(on), max: 0.66 Ω
  • Qg, typ: 20 nc
  • ID, pulse: 17 A
  • Eoss @ 400V: 1.8 J
  • Diode forward voltage: 0.9 V
  • Re: 6.5 Ω
  • Maximum continuous drain current: 6 A at 25°C
  • Pulsed drain current: 17 A
  • Avalanche energy (single pulse): 115 mJ
  • Operating temperature range: -40°C to 150°C
  • Thermal resistance junction-case: 2 K/W
  • Gate threshold voltage: 3.5 - 4.5 V
  • Gate resistance: 6.5 Ω
  • Capacitances (Ciss/Coss): 543 pF/32 pF
  • Reverse recovery time: 65 ns
  • Reverse recovery charge: 0.2 pC
  • Package: PG-TO 252

Buy the Infineon Series CFDA 650V CoolMOS Power Transistor: IPD65R660CFDA

Order the Infineon high-voltage power transistor online today to experience exceptional efficiency and reliability in your automotive or industrial switching applications. Designed with advanced superjunction technology, this 650V MOSFET features an ultra-fast body diode, low conduction and switching losses, and robust ruggedness for high pulse currents. Its RoHS-compliant, lead-free package ensures environmental safety. Perfect for resonant switching and high-voltage electronics, this transistor guarantees high performance, durability, and easy integration for engineers and technicians seeking premium quality components.

Get Infineon IPD65R660CFDA today—built for high-efficiency, robust, and fast switching in demanding automotive and industrial applications.

Frequently Asked Questions

Where can I buy INFINEON IPD65R660CFDAATMA1?

You can click on the BUY or RFQ button to purchase IPD65R660CFDAATMA1 from an authorized INFINEON distributor.

How do I troubleshoot issues or seek technical support for part IPD65R660CFDAATMA1?

You can download the IPD65R660CFDAATMA1 datasheet or visit the INFINEON website for support.

Who is the manufacturer of IPD65R660CFDAATMA1?

INFINEON

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