The IRLZ34NS/LPbF is a high-performance N-channel HEXFET Power MOSFET designed for fast switching and low on-resistance in surface mount and through-hole packages. Operating up to 175°C, it features a drain-to-source voltage of 55V, continuous drain current of 30A, and low gate charge, making it ideal for high-current applications, including power switching and load driving. Its rugged design ensures reliability, with avalanche-rated capabilities and low thermal resistance, suitable for efficient power management in compact electronic systems and industrial equipment.
INFINEON IRLZ34NSTRLPBF High-current Power MOSFET Specifications:
Drain-to-Source Breakdown Voltage: 55 V
Continuous Drain Current: 30 A at Tc=25°C
Pulse Drain Current: 110 A
Power Dissipation: 3.8 W (Pp at Ta=25°C), 68 W (Pp at Tc=25°C)
Vgs Gate-to-Source Voltage: ±16 V
Gate Threshold Voltage: 1.0 V
On-Resistance: 2 Ω (Vds=5.0V, Id=16A)
Operating Temperature Range: -55°C to +175°C
Operating Junction and Storage Temperature: -55°C to +175°C
Thermal Resistance Junction-to-Ambient: 40°C/W
Package Types: Surface Mount D-Pak, Through-Hole IRLZ34NL
Maximum Avalanche Energy: 110 mJ
Gate Charge (Qg): varies with Vgs, typically around 44 nC at Vgs=10V
Switching Time: Rise and Fall Times approximately 168 ns
Maximum Safe Operating Area: Limited by transient thermal impedance
Buy the International Series HEXFET Power MOSFET: IRLZ34NS/LPbF
Purchase the IRLZ34NS/LPbF online today to upgrade your power management system with a reliable, fast-switching HEXFET. This high-performance MOSFET offers 55V and 30A ratings, making it ideal for power switching, load driving, and industrial applications. Its rugged design, low on-resistance, and excellent thermal characteristics ensure efficient operation and durability in your electronic projects. Shop now to benefit from quick delivery and easy integration in your circuit designs, ensuring optimal performance and reliability for your high-current applications.
Get IRLZ34NS/LPbF today—built for precision, high current capacity, and long-lasting durability in power electronics.
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