The BCV62 is a PNP silicon double transistor ideal for use in current mirror applications. It features good thermal coupling, high current gain, low collector-emitter saturation voltage, and is Pb-free and RoHS compliant. Qualified under AEC Q101, it offers reliable performance with a maximum collector-emitter voltage of 30V, collector-base voltage of 30V, and emitter-base voltage of 6V. It supports a collector current up to 100mA and peak 200mA, with low total power dissipation and junction temperature tolerance up to 150°C, making it suitable for various electronic switching and amplification tasks.
Thermal resistance: <170 K/W junction to soldering point
Base-emitter forward voltage: 0.4 V at 10 pA, 1.8 V at 250 mA
DC current gain hFE: 100 (min) to 220 (max for BCV62A), up to 800 (max for BCV62C)
collector-emitter saturation voltage: 75-650 mV depending on current
Package: SOT143 (compact SMD)
RoHS compliant, Pb-free
Buy the Buy Infineon BCV62 Part Number BCV62CE6327HTSA1 Online
Purchase the Infineon BCV62 double transistor online today for reliable current mirror performance. This high-gain, low saturation voltage transistor is RoHS compliant and qualified under AEC Q101, ensuring excellent thermal coupling and robust electrical characteristics. Perfect for switching, amplification, and current mirroring in professional electronic devices. Its compact SOT143 package makes it suitable for space-constrained designs. Enjoy quick delivery, secure ordering, and support for your manufacturing or repair needs with just a few clicks.
Order your Infineon Series BCV62 Transistor today and secure dependable performance for your electronic projects and switching applications.
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