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INFINEON BGA7L1N6E6327XTSA1 Low Noise Amplifier for LTE

The BGA7L1N6 is a compact silicon germanium low noise amplifier designed for LTE applications, covering frequencies from 728 to 960 MHz. It provides a high insertion gain of 13.3 dB and a low noise figure of 0.90 dB, ensuring excellent signal amplification with minimal noise addition. The device operates from 1.5 V to 3.3 V and consumes only 4.4 mA current, making it ideal for power-sensitive LTE front-end modules. Featuring an internally matched 50 ohm RF output and requiring only one external SMD component, it is suitable for small, high-performance wireless devices built with advanced GaAs or SiGe technology. Its RoHS-compliant, leadless TSNP-6-2 package facilitates easy integration into compact RF modules and ensures reliable operation in demanding environments.

Authorized Distributors
Source:DigiKey
Part No:BGA7L1N6E6327XTSA1
Stock:0
Inv Date:05-29-2026
Price: Unit price: $1.11
Buy/RFQ:
Source:DigiKey
Part No:BGA7L1N6E6327XTSA1
Stock:960000
Inv Date:05-29-2026
Price: Unit price: $0.63
Buy/RFQ:
Part No:BGA7L1N6E6327XTSA1
Stock:4099
Inv Date:05-30-2026
Price: Unit price: $1.14
Buy/RFQ:

INFINEON BGA7L1N6E6327XTSA1 Low Noise Amplifier for LTE Specifications:

  • Frequency Range: 728 - 960 MHz
  • Gain: 13.3 dB
  • Noise Figure: 0.90 dB
  • Supply Voltage: 1.5 V to 3.3 V
  • Supply Current: 4.4 mA
  • Input/Output Return Loss: 10 to 25 dB
  • Reverse Isolation: 17 to 22 dB
  • Power Consumption: 4.4 mA
  • Package: TSNP-6-2 leadless package, footprint: 0.7 x 1.1 mm
  • ESD Protection: 2 kV HBM
  • RoHS compliant, lead-free design
  • Operates within junction temperature up to 150°C
  • Designed with B7HF Silicon Germanium technology
  • Internally matched RF output to 50 Ω
  • Digital control for power on/off with 1 V logic high
  • Total power dissipation: less than 60 mW
  • Application: LTE front-end modules, small wireless devices

Buy the Infineon BGA7L1N6 – Reliable LTE Low Noise Amplifier for Industrial Applications

Enhance your LTE device with the BGA7L1N6 high-performance low noise amplifier, offering 13.3 dB gain and 0.90 dB noise figure. Its compact TSNP-6-2 package simplifies integration into small wireless modules, ensuring low power consumption of just 4.4 mA and internal 50 Ω RF matching. Designed with advanced Silicon Germanium technology, it provides excellent signal amplification with minimal noise addition. Whether for mobile communications or industrial RF systems, buy online now for reliable, high-quality LTE front-end solutions.

Buy Infineon BGA7L1N6 now and experience unmatched reliability and performance in LTE RF front-end modules.

Frequently Asked Questions

Where can I buy INFINEON BGA7L1N6E6327XTSA1?

You can click on the BUY or RFQ button to purchase BGA7L1N6E6327XTSA1 from an authorized INFINEON distributor.

How do I troubleshoot issues or seek technical support for part BGA7L1N6E6327XTSA1?

You can download the BGA7L1N6E6327XTSA1 datasheet or visit the INFINEON website for support.

Who is the manufacturer of BGA7L1N6E6327XTSA1?

INFINEON

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