myMectronic
myMectronic

A Premier B2B Part Search

INFINEON IRFR3709ZTRPBF High Frequency Power MOSFET

The IRFR3709ZPbF is a HEXFET Power MOSFET designed for high frequency switching applications including synchronous buck converters for computer processors and isolated DC-DC converters for telecom and industrial use. It features very low Rogion at 4.5V Veg, ultra-low gate impedance, fully characterized avalanche voltage and current ratings, and lead-free construction. Its robust construction ensures reliable performance with a drain-to-source voltage of 30V, continuous drain current up to 860A, and power dissipation of 79W at 25°C, making it ideal for high efficiency, high power density circuits.

Authorized Distributors
Part No:IRFR3709ZTRPBF
Stock:0
Inv Date:05-30-2026
Price: N/A
Buy/RFQ:
Part No:IRFR3709ZTRPBF
Stock:0
Inv Date:05-29-2026
Price: Unit price: $1.38
Buy/RFQ:

INFINEON IRFR3709ZTRPBF High Frequency Power MOSFET Specifications:

  • Drain-to-Source Voltage: 30 V
  • Gate-to-Source Voltage: +20 V
  • Continuous Drain Current: 860 A at Ves=10V, Ta=25°C
  • Maximum Power Dissipation: 79 W at Tc=25°C
  • Junction Temperature Range: -55°C to +175°C
  • Storage Temperature Range: -55°C to +175°C
  • Soldering Temperature (10 sec): 300°C
  • Thermal Resistance, Junction-to-Case: 19°C/W
  • Thermal Resistance, Junction-to-Ambient (PCB Mount): 50°C/W
  • Drain-to-Source Breakdown Voltage: 30V
  • Gate Threshold Voltage: 1.35V to 2.25V
  • Drain-to-Source On-Resistance: 5.2 to 6.5 mΩ at Vgs=10V
  • Gate Charge (Qg): Approx. 17 to 26 nC
  • Input Capacitance (Coss): 2330 pF
  • Output Capacitance (Coss): 460 pF
  • Reverse Transfer Capacitance (Crss): 230 pF
  • Avalanche Energy: 7.9 mJ at specified conditions
  • Body Diode Forward Voltage: typical 1.0 V at 12A
  • Thermal Resistance Junction-to-Case: 19 °C/W
  • Package: D-Pak (TO-252AA), dimensions conforming to industry standards

Buy the International HEXFET Power MOSFET: IRFR3709ZPF

Purchase the IRFR3709ZPbF HEXFET Power MOSFET online today to ensure reliable high-speed switching in your power conversion modules. Designed for efficiency and durability, this MOSFET features a drain-to-source voltage of 30V, ultra-low gate impedance, and high continuous drain currents up to 860A, making it ideal for telecom, industrial, and computer power applications. Its lead-free construction and robust thermal characteristics enable optimal performance in demanding environments. Order now and enhance your circuit’s performance with a trusted industry-standard component—quickly, securely, and at competitive prices.

Get International HEXFET Power MOSFET IRFR3709ZPF today—built for high frequency switching and industrial durability.

Frequently Asked Questions

Where can I buy INFINEON IRFR3709ZTRPBF?

You can click on the BUY or RFQ button to purchase IRFR3709ZTRPBF from an authorized INFINEON distributor.

How do I troubleshoot issues or seek technical support for part IRFR3709ZTRPBF?

You can download the IRFR3709ZTRPBF datasheet or visit the INFINEON website for support.

Who is the manufacturer of IRFR3709ZTRPBF?

INFINEON

INFINEON Part List

Browse and search other INFINEON parts, locate datasheets and stock

Sponsored by