INFINEON IRFR3709ZTRPBF High Frequency Power MOSFET
The IRFR3709ZPbF is a HEXFET Power MOSFET designed for high frequency switching applications including synchronous buck converters for computer processors and isolated DC-DC converters for telecom and industrial use. It features very low Rogion at 4.5V Veg, ultra-low gate impedance, fully characterized avalanche voltage and current ratings, and lead-free construction. Its robust construction ensures reliable performance with a drain-to-source voltage of 30V, continuous drain current up to 860A, and power dissipation of 79W at 25°C, making it ideal for high efficiency, high power density circuits.
Drain-to-Source On-Resistance: 5.2 to 6.5 mΩ at Vgs=10V
Gate Charge (Qg): Approx. 17 to 26 nC
Input Capacitance (Coss): 2330 pF
Output Capacitance (Coss): 460 pF
Reverse Transfer Capacitance (Crss): 230 pF
Avalanche Energy: 7.9 mJ at specified conditions
Body Diode Forward Voltage: typical 1.0 V at 12A
Thermal Resistance Junction-to-Case: 19 °C/W
Package: D-Pak (TO-252AA), dimensions conforming to industry standards
Buy the International HEXFET Power MOSFET: IRFR3709ZPF
Purchase the IRFR3709ZPbF HEXFET Power MOSFET online today to ensure reliable high-speed switching in your power conversion modules. Designed for efficiency and durability, this MOSFET features a drain-to-source voltage of 30V, ultra-low gate impedance, and high continuous drain currents up to 860A, making it ideal for telecom, industrial, and computer power applications. Its lead-free construction and robust thermal characteristics enable optimal performance in demanding environments. Order now and enhance your circuit’s performance with a trusted industry-standard component—quickly, securely, and at competitive prices.
Get International HEXFET Power MOSFET IRFR3709ZPF today—built for high frequency switching and industrial durability.
Frequently Asked Questions
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