The BFP196WN is a low noise silicon bipolar RF transistor designed for wideband amplifiers, GNSS, antenna, and telecommunication systems. It features a 4-pin SOT343 package suitable for high voltage applications (Vce<12V), with a maximum power of 700 mW and a transition frequency of 7.5 GHz. This device offers low noise figure (NF=1.3 dB at 900 MHz) and is ROHS compliant. Its stability and ease of use make it ideal for power amplifiers, CATV, DECT, and PCN applications, with industrial-grade qualification ensuring reliable performance.
Collector emitter leakage current: 100 pA at Vce=20V
Collector base leakage current: 100 nA at Veg=10V
Base emitter leakage current: 1 μA at Vep=1V
DC current gain: 70 to 140 (Pulse measurement)
Noise figure: 1.3 dB at 900 MHz
Operating temperature: -55°C to 150°C
Device is electrostatically sensitive, observe handling precautions
Qualified for industrial applications per JEDEC47/20/22
Dimensions in mm, compliant with ISO 128 & Projection Method 1
RoHS compliant, halogen-free, Pb-free
Buy the Infineon Series RF Amplifier: BFP196WN
Get your Infineon Series BFP196WN RF Transistor now for stable, low noise performance in wideband amplifiers, GNSS, and telecommunication applications. This robust device offers a transition frequency of 7.5 GHz, with low noise figure of 1.3 dB at 900 MHz, and maximum power of 700 mW. Compact SOT343 packaging ensures easy integration into your designs. Suitable for high voltage applications (Vce<12V), it’s ROHS compliant and qualified for industrial use, making it a reliable choice for demanding RF projects. Buy online today to improve your communication systems.
Order your Infineon Series RF Amplifier BFP196WN today and give your projects the dependable quality they deserve, ensuring optimal low noise amplification in communication systems.
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