The IRF7319PbF is a high-performance HEXFET power MOSFET featuring ultra-low on-resistance, fast switching speed, and ruggedized design, ideal for power applications. Packaged in SO-8 with modifications for enhanced thermal characteristics, it supports vapor phase, infrared, or wave soldering techniques. Its features include a drain-source voltage of 30V, high continuous drain current up to 8.8A, and avalanche ratings, making it reliable for high-demand industrial, power management, and switching applications. This durable, lead-free device offers efficient energy management with robust thermal performance, simplifying design integration and improving system efficiency.
INFINEON IRF7319TRPBF Power MOSFET Specifications:
Drain-Source Voltage: 30V
Gate-Source Voltage: ±20V
Continuous Drain Current: 8.8A at 25°C
Pulsed Drain Current: 30A
Maximum Power Dissipation: 73W at 70°C
Avalanche Energy: 82mJ
Maximum Junction-to-Ambient Resistance: 625°C/W
Junction and Storage Temperature Range: -55°C to +150°C
Thermal Resistance Junction-to-Ambient: 625°C/W
Package: SO-8, modified for enhanced thermal characteristics
Lead-Free: Yes
Fully Avalanche Rated, Fully surface mount compatible
Buy the International IRF7319PbF – Reliable HEXFET Power MOSFET for Industrial Applications
Purchase the IRF7319PbF online today—designed for optimal power switching with ultra-low on-resistance, fast switching speed, and rugged construction. This reliable HEXFET device in SO-8 package offers excellent thermal performance, making it ideal for industrial, power supply, and automation applications. With fully avalanche rated features and lead-free construction, it ensures safety, durability, and eco-friendliness. Simplify your power designs by integrating this high-performance MOSFET into your systems for enhanced efficiency, reduced thermal management issues, and improved overall reliability.
Get International IRF7319PbF today—built for high efficiency and long-lasting durability in power management systems.
Frequently Asked Questions
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