The 650V CoolMOS C7 Power Transistor from Infineon features superjunction technology that provides high efficiency, low gate charge, and excellent reliability for high-voltage applications. Designed for PFC and hard switching PWM stages, this MOSFET offers high system performance, increased power density, and lower cooling requirements. Its rugged dv/dt resistance and low on-state resistance ensure system stability and improved thermal management, suitable for computing, telecom, UPS, and solar systems, enabling higher frequency operation and system cost savings.
INFINEON IPA65R045C7XKSA1 Power Transistor Specifications:
Drain-source breakdown voltage: 650 V
Continuous drain current: 8 A
Pulsed drain current: 212 A
Avalanche energy (single pulse): 249 mJ
Gate threshold voltage: 3 – 4 V
Gate-source leakage current: 100 nA
On-state resistance: 0.096 Ω
Power dissipation: 35 W
Operating junction temperature: -55°C to 150°C
Storage temperature: -55°C to 150°C
Thermal resistance junction-case: 3.6 °C/W
Insulation withstand voltage: 2500 V
Gate charge: total 93 nC
Diode forward voltage: 0.9 V
Reverse recovery time: 725 ns
Switching times delay: 20-82 ns
Mounting torque: up to 50 N·cm
Buy the Infineon Series CoolMOS C7: IPA65R045C7 Power Transistor
Discover the high-performance Infineon Power Transistor designed for demanding high-voltage switching. Perfect for industrial, telecom, UPS, and solar applications, it offers excellent efficiency, thermal stability, and rugged dv/dt resistance. The Easy-to-drive gate and low on-resistance make for straightforward implementation, reducing cooling needs and system costs. Suitable for high-frequency operations, this transistor enhances system reliability, lowers operating temperatures, and ensures long-term stability. Purchase online today and upgrade your power management system with confidence.
Buy Infineon CoolMOS C7 power transistor now and experience unmatched efficiency, reliability, and high-frequency performance for your power management needs.
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