The BFP640ESD is a low noise, wideband NPN silicon germanium bipolar RF transistor, supporting voltages up to 4.1 V and currents up to 50 mA. It is designed for mobile, satellite, multimedia, and wireless applications, offering high power gain at frequencies up to 10 GHz. The device features robust electrostatic discharge protection (2kV HBM) and internal circuits that ensure durability in RF environments, making it suitable as a low noise amplifier, active mixer, or buffer in high-frequency electronics. Its easy-to-use package enhances field deployment and testing reliability.
Collector Emitter Voltage (E-B short circuited): 4.1 V
Collector Current: 50 mA
RF Input Power: 21 dBm
Total Power Dissipation: 200 mW at Tj < 88°C
ESD Robustness: 2 kV (HBM)
Junction Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Transition Frequency: 45 GHz
Gain Max at 1.5 GHz: 26.5 dB
Gain Max at 2.4 GHz: 23 dB
Minimum Noise Figure: 0.65 dB at 1.5 GHz, 0.7 dB at 2.4 GHz
Package: SOT343 (visible leads), RoHS and halogen-free
Buy the Buy Infineon BFP640ESD Part Number BFP640ESDH6327XTSA1 Online
Order the Infineon BFP640ESD online today to ensure reliable high-frequency performance in your RF circuits. This versatile low noise transistor offers excellent gain up to 45 GHz, supporting frequencies up to 10 GHz with minimal noise figure of just 0.65 dB at 1.5 GHz. It is housed in a compact SOT343 package, providing ease of use in portable and fixed applications such as satellite communication, wireless systems, and mobile devices. Enjoy fast delivery and competitive pricing when you buy this high-performance RF transistor online.
Get Infineon BFP640ESD today—designed for ultra-low noise amplification with high RF power handling and robust ESD protection.
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