The OptiMOS Power-Transistor is an N-channel enhancement mode device designed for high-efficiency power switching in automotive and industrial applications. It features ultra low Rds(on), a maximum continuous drain current of 77A, and a drain-source breakdown voltage of 55V. With a compact green package, it is qualified for automotive use under AEC Q101 standards, capable of operating at temperatures from -55°C to +175°C, and tested for 100% avalanche reliability. Its thermal and electrical characteristics ensure reliable, high-speed switching and energy efficiency in demanding environments.
INFINEON IPP77N06S212AKSA2 Power Transistor Specifications:
Maximum drain current: 77A
Drain-source breakdown voltage: 55V
Rds(on): 9.8 to 12.0 mΩ
Gate threshold voltage: 2.1 to 4.0 V
Continuous power dissipation: 158 W
Operating temperature range: -55°C to +175°C
Package: PG-TO263-3-2 and PG-T0220-3-1, green lead-free
Thermal resistance junction-case: 0.95 K/W
Thermal resistance junction-ambient: 62 K/W
Gate charge: 45 to 60 nC
Input capacitance: 1770 pF
Reverse recovery charge: 64 to 80 nC
Avalanche energy: 280 mJ
Buy the Infineon Series OptiMOS Power Transistor: IPP77N06S2-12
Order the Infineon OptiMOS Power Transistor today and enhance your electronic design with reliable high-speed switching, low conduction losses, and superior thermal performance. Ideal for automotive and industrial systems, it offers a maximum drain current of 77A, a breakdown voltage of 55V, and ultra low Rds(on) for superior energy efficiency. Its robust construction and automotive qualification ensure longevity and stability in harsh environments. Take advantage of fast delivery and expert support by purchasing online now for your power management needs.
Buy Infineon OptiMOS IPP77N06S2-12 now and experience unmatched reliability and high efficiency for demanding power switching applications.
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