The IRF1310NPbF is a high-performance N-channel HEXFET power MOSFET designed for power switching applications. It features advanced processing techniques that yield extremely low on-resistance and fast switching capabilities. The device has a 100V drain-to-source breakdown voltage, a maximum continuous drain current of 30A, and a pulsed drain current of 140A, with a maximum power dissipation of 160W. Its TO-220 package ensures excellent thermal performance, making it suitable for industrial and commercial power electronics requiring high efficiency and reliability.
Repetitive Avalanche Energy: 16 mJ at starting Tj= 26°C
Soldering Temperature (10 sec): 300°C
Package: TO-220AB
Buy the Buy International IRF1310NPbF Power MOSFET Part Number IRF1310NPbF Online
Discover the IRF1310NPbF N-channel HEXFET power MOSFET, ideal for high-speed switching with low on-resistance. Its 100V drain-to-source breakdown, 30A continuous current, and robust TO-220 package make it perfect for industrial and commercial applications demanding efficiency, durability, and reliable performance. Enhance your electronic designs with this advanced, lead-free MOSFET that offers excellent thermal management, fast switching, and high power dissipation capabilities. Purchase online today for seamless integration into your power systems.
Buy International IRF1310NPbF power MOSFET now and experience high efficiency and reliable switching for your industrial power needs.
Frequently Asked Questions
Where can I buy INFINEON IRF1310NPBF?
You can click on the BUY or RFQ button to purchase IRF1310NPBF from an authorized INFINEON distributor.
How do I troubleshoot issues or seek technical support for part IRF1310NPBF?