This advanced power module features Trench/Fieldstop IGBT3 technology with emitter-controlled diodes, PressFIT contacts, and low thermal resistance Al2O3 substrate, making it ideal for 3-level inverter applications, motor drives, solar systems, and UPS. It offers enhanced voltage blocking capability up to 650V, low inductive design, and rugged mounting for reliable operation. Designed for high-performance switching, it ensures low losses, efficient thermal management, and robust mechanical construction suitable for demanding industrial environments.
INFINEON F3L100R07W2E3B11BOMA1 Power Module Specifications:
Collector-Emitter Voltage: 650 V
Continuous Collector Current: 100 A
Peak Collector Current: 200 A
Power Dissipation: 300 W
Gate-Emitter Peak Voltage: +120 V
Switching Losses: Typical values depend on load and conditions
Thermal Resistance, Junction to Case: 0.45-0.50 K/W
Thermal Resistance, Case to Heatsink: 1 K/W
Isolation Voltage RMS: 25 kV
Module Size: Compact design with PressFIT contacts
Operating Temperature Range: -40°C to 150°C
Isolation Distance: Contact to heatsink 115 mm; Contact to contact 63 mm
Stray Inductance: Approximately 15 nH
Input Capacitance: 6.20 nF
Reverse Transfer Capacitance: 0.19 nF
Weight: 39.9 g
Buy the Buy Infineon IGBT Module Part Number F3L100RO7W2E3B11 Online
Get the Infineon F3L100RO7W2E3B11 power module now available online. This module features advanced IGBT3 technology with emitter-controlled diodes, PressFIT contacts, robust mechanical construction, and high voltage blocking up to 650V. Its compact design is ideal for 3-level inverter applications, motor drives, solar power systems, and UPS solutions, ensuring low losses, efficient thermal management, and reliable performance in demanding industrial environments. Purchase now and improve your system's efficiency and durability.
Order your Infineon F3L100RO7W2E3B11 power module today and enhance your inverter, motor drive, solar, or UPS systems with reliable quality.
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