This high-performance N-channel Power MOSFET utilizes advanced HEXFET™ technology in a compact DirectFET™ SJ package, optimized for power supplies and isolated DC-DC converters. It offers low on-state resistance, high current handling, and high thermal efficiency through dual-sided cooling. Designed to maximize power density and system reliability, the device supports synchronous rectification in high-voltage applications up to 100V, with excellent gate charge and switching characteristics. It adheres to environmental standards like RoHS and is suitable for telecom, industrial, and consumer power modules requiring dependable high-current switching.
INFINEON IRF6645TRPBF High-Current Power MOSFET Specifications:
Drain-to-Source Voltage: 100 V
Gate-to-Source Voltage: ±20 V
Continuous Drain Current at 25°C: 5.7 A
Continuous Drain Current at 70°C: 4.5 A
Pulsed Drain Current: 45 A
Power Dissipation at 25°C: 2.2 W
Thermal Resistance Junction-to-Ambient: 58 °C/W
Junction Operating Temperature: -40°C to +150°C
Package: DirectFET SJ, profile <0.7mm
RoHS Compliant, Halogen-Free, Lead-Free up to 260°C Reflow
Gate Charge (Qg): 14–20 nC
On-Resistance (Rds(on)) Typical: 35 mΩ at Vgs=10V
Reverse Recovery Time: 47 ns
Avalanche Energy: 29 mJ
Peak Soldering Temperature: 270°C
Buy the Buy International IRF6645TRPBF Part Number IRF6645TRPBF Online
Purchase the IRF6645TRPBF now to enhance your power conversion systems with a reliable, high-performance N-channel MOSFET. Featuring advanced HEXFET technology and DirectFET packaging, it offers low Rds(on), high current capability, and excellent thermal management via dual-sided cooling. Ideal for power supplies and isolated DC-DC converters, this device ensures maximum efficiency and system reliability. Order online today to access fast delivery, authentic components, and technical support for your demanding industrial or telecom power applications.
Buy International IRF6645TRPBF now and experience unmatched reliability and high efficiency in power switching applications.
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