The 600V CoolGaN enhancement-mode power transistor offers ultra-fast switching, low gate charge, and high efficiency, suitable for industrial, telecom, and datacenter SMPS applications such as half-bridge topologies, Totem pole PFC, and high-frequency LLC circuits. It features a normally OFF switch, capable of reverse conduction, with exceptional ruggedness and qualification for industrial standards. Designed for high-frequency switching and system cost reductions, this transistor ensures reliable performance in demanding power management applications with a drain-source voltage of 600V and a continuous drain current of up to 31A.
Purchase the high-performance Cosmo Series GaN Power Transistor IGO60RO70D1 online today. Designed for industrial, telecom, and datacenter power supplies, it offers ultra-fast switching, high efficiency, and robust ruggedness. Featuring a 600V drain-source voltage and a continuous drain current of up to 31A, this enhancement-mode GaN transistor ensures reliable high-frequency operation. Perfect for half-bridge topologies, Totem pole PFC, and high-frequency LLC circuits, it delivers system cost savings, improved power density, and reduced EMI, making it an essential component for demanding power management applications.
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