The IPA60R280E6XKSA1 Power Transistor operates as a high-voltage MOSFET designed for efficient switching in power management applications. Featuring extremely low conduction and switching losses, it is suitable for PFC, PWM, and resonant switching stages in devices such as power supplies, lighting, servers, and telecom equipment. Its superjunction technology ensures high ruggedness and ease of drive, with a drain-source breakdown voltage of 600V, low Rds(on), and optimized switching characteristics for reliable performance in industrial applications. This device is JEDEC-qualified, Pb-free, and halogen-free.
INFINEON IPA60R280E6XKSA1 Power Transistor Specifications:
Drain-source breakdown voltage: 600 V
Continuous drain current: 13.8 A at 25°C, 8.7 A at 100°C
Pulsed drain current: 40 A
Maximum avalanche energy: 284 mJ (single pulse), 0.43 J (repetitive)
Gate threshold voltage: 2.5 V to 3.5 V
Gate charge: total 43 nc, gate to source 5 nc, gate to drain 22 nc
Rds(on): 0.28 Ω (max.) at 10 V Gate
Switching times: turn-on delay 11 ns, rise time 9 ns, turn-off delay and fall time also specified
Operating temperature range: -65°C to 150°C
Package type: FullPAK TO-220 (IPA60R280E6)
Buy the Infineon IPx60R280E6 – Reliable 600V Power Transistor for Industrial Applications
Experience superior performance with the Infineon Power Transistor, designed for high voltage applications requiring low losses and robust ruggedness. This 600V MOSFET excels in power supplies, PFC, PWM, and resonant switching stages, ensuring reliable and efficient operation. Its superjunction technology offers low Rds(on) and exceptional switching characteristics, making it ideal for demanding industrial and telecom applications. Purchase this high-quality device online now for a solution that combines durability, efficiency, and easy integration for your power management needs.
Get Infineon IPx60R280E6 today—built for high voltage and efficient power switching in industrial equipment and power management systems.
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