INFINEON IKA15N65F5XKSA1 High-Speed Power Transistor
The IKA15N65F5 is a high-speed fifth-generation IGBT in TRENCHSTOP™ 5 technology. It is copacked with a RAPID 1 fast and soft antiparallel diode, offering superior efficiency in hard switching and resonant topologies. With a 650V breakdown voltage and maximum junction temperature of 175°C, this device is qualified per JEDEC standards. Suitable for solar inverters, power supplies, welding converters, and high-frequency switching applications, it provides low Qc, excellent thermal performance, and RoHS compliance, ensuring reliable industrial power control with complete PSpice models available.
INFINEON IKA15N65F5XKSA1 High-Speed Power Transistor Specifications:
Collector-emitter voltage: 650V
Collector current (Tc=25°C): 15A
Maximum junction temperature: 175°C
Diode forward current: 12.3A
Gate-emitter voltage: +20V
Power dissipation at Tc=25°C: 33.3W
Thermal resistance junction to case: 4.50KW
Thermal resistance junction to ambient: 65KW
Gate charge: 38.0nC
Switching energy (Eon): 0.13mJ
Switching energy (Eoff): 0.04mJ
Reverse recovery time: 50ns
Package: PG-T0220-3 FP
RoHS compliant, Pb-free lead plating
Buy the Infineon Series TRENCHSTOP 5 IGBT: IKA15N65F5
Enhance your power conversion systems with the Infineon IKA15N65F5 high-speed IGBT, designed for efficient high-frequency switching and robust industrial applications. This advanced device features a 650V breakdown voltage, low Qc, and exceptional thermal performance, making it ideal for solar inverters, welding, and power supplies. Its RoHS compliance and comprehensive PSpice models ensure seamless integration into your designs, providing reliable operation and improved efficiency. Order online today and elevate your electronic projects with trusted semiconductor solutions.
Order your Infineon Series TRENCHSTOP 5 IGBT IKA15N65F5 today and give your projects the dependable quality they deserve.
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