The IKB30N65EH5 is a high-speed switching IGBT module featuring a 650V breakdown voltage and a maximum junction temperature of 175°C. It incorporates Infineon’s Trenchstop™ 5 technology, ensuring efficient hard switching and resonant topologies, with low Qc and full-rated current RAPID 1 anti-parallel diode. Suitable for industrial power supplies, energy generation, and energy distribution applications, it offers reliable performance with Pb-free RoHS compliance, complete PSpice models, and robust thermal and electrical characteristics for demanding environments.
Buy the Buy Infineon IGBT Part Number IKB30N65EH5ATMA1 Online
Purchase the Infineon IGBT IKB30N65EH5 today to ensure top-tier performance in energy generation, industrial power supplies, and energy storage systems. This high-speed switching device features a 650V breakdown voltage and 55A critical current, enabling efficient operation in demanding environments. Its advanced Trenchstop™ 5 technology provides excellent efficiency during hard switching and resonant topologies. Built for durability, it includes full-rated diodes, RoHS compliance, and comprehensive PSpice models, making it ideal for applications requiring fast switching, high thermal stability, and long-lasting reliability.
Get Infineon IGBT IKB30N65EH5ATMA1 today—built for high-speed switching, efficiency, and reliable industrial performance.
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