The CoolSic™ 1200V SiC Trench MOSFET is a high-performance, silicon carbide power transistor designed for efficient high-voltage switching applications. It features low switching losses, a drain-source maximum voltage of 1200V, and a continuous drain current of 56A. The device offers excellent gate threshold, robust body diode, and temperature-independent turn-off characteristics, making it suitable for industrial power supplies, solar inverters, and infrastructure chargers. Its optimized package ensures reliable operation and thermal performance in demanding environments.
Gate-source voltage: -7V to 23V, recommended turn-on 15-18V, turn-off 0V
Power dissipation: 227 W at 25°C, 14 W at 100°C
Junction temperature: -55°C to 175°C
Storage temperature: -55°C to 150°C
Thermal resistance, junction-case: 0.51–0.66 K/W
Maximum operating temperature: 175°C
Soldering temperature: 260°C for wave soldering (leads only, 10 seconds)
Package: PG-TO0247-3, dimensions include A: 4.83-5.21mm, D: 20.80-21.10mm, D2: 0.85-1.36mm
Buy the Infineon Series CoolSic 1200V SiC Trench MOSFET: IMW120R030M1H
Experience superior efficiency and high voltage handling with the Silicon Carbide MOSFET, ideal for industrial power systems, solar inverters, and infrastructure chargers. This device offers low switching losses, excellent thermal performance, and robust operation at 1200V voltage rating, making it perfect for demanding environments. Reliable and easy to control, it helps reduce system complexity and costs while enabling higher frequency operation. Purchase online today and elevate your projects with this high-quality, industrial-grade power transistor designed for maximum performance and durability.
Order your Infineon Series CoolSic 1200V SiC Trench MOSFET IMW120R030M1H today and give your projects the dependable quality they deserve, ensuring high efficiency and reliability in demanding applications.
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