INFINEON IPD60R180P7SAUMA1 High-Voltage Power Transistor
The 600V CoolMOS™ P7 Power Transistor is a high-performance, superjunction MOSFET designed for efficient switching in power supply applications. It features low switching and conduction losses, outstanding robustness against hard commutation, and excellent ESD capability exceeding 2kV. Suitable for PFC, LLC, and resonant switching stages, this transistor ensures improved thermal management and power density, making it ideal for server, telecom, and lighting power supplies. Its rugged dv/dt characteristics enable reliable operation in demanding environments, combining switching efficiency with ease of use for diverse high-voltage applications.
INFINEON IPD60R180P7SAUMA1 High-Voltage Power Transistor Specifications:
Drain-source breakdown voltage: 600 V
Continuous drain current: 8 A
Pulsed drain current: 53 A
Avalanche energy, single pulse: 56 mJ
Avalanche energy, repetitive: 0.28 mJ
Gate threshold voltage: 3-4 V
On-state resistance: 0.339 Ω
Gate resistance: 11 Ω
Maximum operating junction temperature: 150°C
Thermal resistance, junction to case: 1.74°C/W
Thermal resistance, junction to ambient: 62°C/W
Storage temperature: -40°C to 150°C
Operating junction temperature: -40°C to 150°C
Power dissipation: 72 W
Buy the Infineon Series P7 High-Voltage MOSFET: IPD60R180P7
Purchase the Infineon high-voltage power transistor online today to benefit from rapid delivery, trusted quality, and superior efficiency. Designed for demanding power supply applications such as PFC stages, resonant switching, and telecom power modules, this robust device offers low conduction and switching losses, excellent ESD robustness exceeding 2kV, and rugged dv/dt capability. Its compact DPAK package facilitates thermal management and easy installation, ensuring high power density and reliable operation in various industrial, server, and lighting applications. Order now for quick access to this high-demand component.
Buy Infineon IPD60R180P7 now and experience unmatched reliability and performance with a robust high-voltage power transistor.
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