The IR2111SPBF is a high-voltage, high-speed power MOSFET and IGBT half-bridge driver designed for use in half-bridge applications. It features dependent high-side and low-side output channels with proprietary high-voltage IC and latch-immune CMOS technologies, enabling robust monolithic construction. The device's logic inputs are compatible with standard CMOS outputs. Its output driver includes a high pulse current buffer optimized to prevent cross-conduction. Internal dead-time circuitry helps avoid shoot-through in the output half-bridge. The floating channel is suitable for bootstrap operation, capable of driving an N-channel power MOSFET or IGBT in a high-side configuration with operating voltages up to 600V. Additional features include tolerance to negative transient voltages, under-voltage lockout for both channels, CMOS Schmitt-triggered inputs with pull-down resistors, matched propagation delays, and high-side output synchronized with input. This component is ideal for power management applications.
Enhance your power management system with the IR2111SPBF high-voltage half-bridge driver. Designed for robust operation up to 600V, it offers dependent high and low side outputs, internal dead-time control, and CMOS compatibility. Suitable for driving MOSFETs and IGBTs with high pulse current buffers, it ensures efficient switching and prevents shoot-through in half-bridge configurations. Built with proprietary monolithic technology, its features include tolerance to transient voltages, under-voltage lockout, and matched propagation delays, making it ideal for reliable industrial applications.
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You can download the IR2111SPBF datasheet or visit the INFINEON website for support.
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